62 silicon npn epitaxial planar transistor (complement to type 2sa1216) application : audio and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 180 180 5 17 5 200(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics n typical switching characteristics (common emitter) symbol i cbo i ebo v (br)ceo h fe v ce (sat) f t c ob ratings 100 max 100 max 180 min 30 min * 2.0 max 50 typ 250 typ unit m a m a v v mhz pf conditions v cb =180v v eb =5v i c =25ma v ce =4v, i c =8v i c =8a, i b =0.8a v ce =12v, i e =?a v cb =10v, f=1mhz v cc (v) 40 r l ( ) 4 i c (a) 10 v b2 (v) ? i b2 (a) ? t on ( m s) 0.2typ t stg ( m s) 1.3typ t f ( m s) 0.45typ i b1 (a) 1 lapt 2sc2922 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating safe operating area (single pulse) f t i e characteristics (typical) 0 3 2 1 0 0.2 0.4 0.6 1.0 0.8 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =10a 5a 0 17 15 10 5 0 2 2.4 1 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c ?0?c (case temp) 200 160 120 80 40 5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 2 10 100 300 0.2 1 0.5 10 50 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling dc 10ms 0.02 0.1 1 10 5 0.5 17 10 50 100 200 collector current i c (a) dc current gain h fe (v ce =4v) typ 0 0 5 17 15 10 2 134 collector-emitter voltage v ce (v) collector current i c (a) 600ma 700ma 1a 500ma 400ma 300ma 200ma 100ma 50ma i b =20ma 1.5a (v ce =4v) 0.02 0.5 1 5 10 0.1 17 collector current i c (a) dc current gain h fe 125?c 25?c ?0?c 10 50 100 200 ?.02 ?.1 ? ? ?0 0 40 60 20 80 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) typ 1 10 100 1000 2000 time t(ms) 0.1 1 2 0.5 transient thermal resistance q j-a (?c/w) 2 3 1.05 +0.2 -0.1 be 5.45 ?.1 5.45 ?.1 2-?.2 ?.1 36.4 ?.3 9 24.4 ?.2 7 21.4 ?.3 20.0min 4.0max 0.65 +0.2 -0.1 3.0 +0.3 -0.1 6.0 ?.2 2.1 a b c external dimensions mt-200 weight : approx 18.4g a. part no. b. lot no. * h fe rank o(30 to 60), y(50 to 100), p(70 to 140), g(90 to 180)
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